1) Jorg Schafera, Andreas Simonsa, Jurgen Wolfruma, , Roland A Fischerb
Detection of gas-phase species in MOCVD of GaN using molecular beam quadrupole mass spectrometry
Chemical Physics Letters
Volume 319, Issues 5-6, 24 March 2000, Pages 477-481
- DOI:
http://dx.doi.org/10.1016/S0009-2614(00)00121-4
Effects of hydrogen on GaN metalorganic vapor-phase epitaxy using tertiarybutylhydrazine as nitrogen source
Journal of Crystal Growth
Volume 266, Issues 1-3, 15 May 2004, Pages 347-353
- DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2004.02.065
Thin Solid Films, Volume 367, Issues 1-2, 15 May 2000, Pages 281-289
- DOI:
http://dx.doi.org/10.1016/S0040-6090(00)00689-1
4) A. Shintani, S. Minagawa, Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3
Journal of Crystal Growth, Volume 22, Issue 1, March 1974, Pages 1-5
- DOI:
http://dx.doi.org/10.1016/0022-0248(74)90050-5
Journal of Crystal Growth
Volumes 175-176, Part 1, 1 May 1997, Pages 89-93
Molecular Beam Epitaxy 1996
- DOI:
http://dx.doi.org/10.1016/S0022-0248(96)01020-2
6) Buguo Wanga, , , Michael J. Callahanb
Transport growth of GaN crystals by the ammonothermal technique using various nutrients
Journal of Crystal Growth
Volume 291, Issue 2, 1 June 2006, Pages 455-460
- DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2006.03.035
7) J. Zhang, Q. Cui , , Y. Xie, H. Jiao, X. Li, Y. Wang, H. Ma, L. Shen, G. Zou
High-pressure high-temperature synthesis of GaN with melamine as the nitrogen source
Diamond and Related Materials
Volume 15, Issue 9, September 2006, Pages 1242-1245
- DOI:
http://dx.doi.org/10.1016/j.diamond.2005.09.044