GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko and A. Ougazzaden
Journal of Crystal Growth
Volume 298, January 2007, Pages 428-432
- DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2006.10.064
Спасибо!