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Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mutsuhiro Tanaka and Yoshihiko Masa
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
(Received March 10, 2005; accepted March 23, 2005; published April 8, 2005)
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http:/dx.doi.org/10.1143/JJAP.44.L505Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki, Toru Nagashima, Hisashi Murakami, Kazuya Takada, and Akinori Koukitu
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
Research and Development Division, Tokuyama Corporation, Shibuya Konno Bldg., 3-3-1 Shibuya, Shibuya-ku, Tokyo 150-8383, Japan
Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba, Ibaraki 300-4247, Japan
(Received March 4, 2008; accepted March 21, 2008; published online April 11, 2008)
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http:/dx.doi.org/ 10.1143/APEX.1.045003
